RESISTIVE MEMORY CELL
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United States of America Patent
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app pub date -
Sep 10, 2015
filing date -
May 17, 2011
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Abstract
Semiconductor memory devices, resistive memory devices, memory cell structures, and methods of forming a resistive memory cell are provided. One example method of a resistive memory cell can include a number of dielectric regions formed between two electrodes, and a barrier dielectric region formed between each of the dielectric regions. The barrier dielectric region serves to reduce an oxygen diffusion rate associated with the dielectric regions.
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