SEMICONDUCTOR STRUCTURE

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United States of America Patent

APP PUB NO 20150380605A1
SERIAL NO

14707010

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A semiconductor structure includes a substrate, a first un-doped semiconductor layer, a second un-doped semiconductor layer and at least one doped insertion layer. The first un-doped semiconductor layer is disposed on the substrate. The second un-doped semiconductor layer is disposed on the first un-doped semiconductor layer.

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Patent Owner(s)

Patent OwnerAddress
GENESIS PHOTONICS INCNO 31 SEC 2 HUANDONG RD SHANHUA DIST TAINAN CITY 741014

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Chi-Hao Tainan City, TW 12 33
Huang, Chi-Feng Tainan City, TW 475 1797
Tu, Sheng-Han Tainan City, TW 8 16

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