HETEROJUNCTION BIPOLAR TRANSISTOR WITH IMPROVED CURRENT GAIN
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United States of America Patent
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Sep 8, 2015
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Jun 22, 2012
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Abstract
A heterojunction bipolar transistor (HBT) with improved current gain, in which the HBT comprises a substrate, a modulation-doped buffer structure, an n-type sub-collector layer, an n-type collector layer, a p-type base layer, an n-type emitter layer, an emitter cap layer, and an emitter contact layer, a collector electrode, a base electrode and an emitter electrode, wherein the modulation-doped buffer structure includes at least one doped layer having a thickness of at least 10 Å and less than 3000 Å and doped a dopant element with doping concentration at least 3×1017cm−3 and no greater than 2×1020 cm−3, wherein the dopant element is selected from the group consisting of C, Zn, Mg, Be and S.
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