Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE
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United States of America Patent
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Dec 31, 2015
app pub date -
Feb 27, 2015
filing date -
Jun 30, 2014
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Abstract
A Ga2O3-based single crystal substrate includes a main surface including BOW of not less than −13 μm and not more than 0 μm. The main surface may further include WARP of not more than 25 μm. The main surface may further include TTV of not more than 10 μm.
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