GRAPHENE GROWTH ON SIDEWALLS OF PATTERNED SUBSTRATE
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United States of America Patent
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Dec 31, 2015
app pub date -
Feb 1, 2014
filing date -
Feb 1, 2013
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Abstract
A method for forming a graphite-based structure comprises patterning a substrate thereby forming a plurality of elements, each respective element in the plurality of elements separated from an adjacent element by a corresponding trench in a plurality of trenches on the substrate. A first element in the plurality of elements has a first surface. A first trench in the plurality of trenches separates the first element from an adjacent element in the plurality of elements, and the first trench has a second surface. The first surface and the second surface are separated by a first side wall of the first element. The method further comprises creating a graphene initiating layer on the first side wall of the first element. The method also comprises generating graphene using the graphene initiating layer thereby forming the graphite-based structure.
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