TE-BASED THERMOELECTRIC MATERIAL HAVING COMPLEX CRYSTAL STRUCTURE BY ADDITION OF INTERSTITIAL DOPANT
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United States of America Patent
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Dec 24, 2015
app pub date -
Aug 29, 2014
filing date -
Jun 24, 2014
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This invention relates to a Te-based thermoelectric material having stacking faults by addition of an interstitial dopant, including unit cells configured such that A-B-A-C-A elements are stacked to five layers, in which A element of a terminal of a unit cell and A element of a terminal of another unit cell are repeatedly stacked by a van der Waals interaction, wherein an interstitial element as the dopant is located at an interstitial position between the repeatedly stacked A elements adjacent to each other, thus generating stacking faults of the repeatedly stacked unit cells to thereby form a twin as well as a complex crystal structure different from the unit cells (where A is Te or Se, B is Bi or Sb, and C is Bi or Sb).
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