III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
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United States of America Patent
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Issued Date -
Dec 24, 2015
app pub date -
Nov 28, 2013
filing date -
Jan 30, 2013
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Abstract
To provide a III nitride semiconductor light emitting device in which the formation of cracks in an active layer is suppressed and the light output power is improved, a III nitride semiconductor light emitting device has an n-type cladding layer, an active layer, and a p-type cladding layer in order. The active layer has a multiple quantum-well structure in which barrier layers made of AlXGa1-XN and well layers are alternately stacked. The Al content X of the barrier layers is larger as the barrier layer is closer to a first barrier layer on the n-type cladding layer side and a second barrier layer on the p-type cladding layer side with reference to one or more of intermediate barrier layers that have the lowest Al content X min of the intermediate barrier layers.
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