Group III-V HEMT Having a Diode Controlled Substrate
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United States of America Patent
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Issued Date -
Dec 24, 2015
app pub date -
Jun 2, 2015
filing date -
Jun 23, 2014
priority date (Note) -
Abandoned
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Abstract
There are disclosed herein various implementations of a group III-V high electron mobility transistor (HEMT) having a diode controlled substrate. Such a group III-V HEMT is situated over a substrate, and includes a diode having an anode provided by the substrate. The diode is configured to ground the substrate when the group III-V HEMT is in an off-state and to cause the substrate to float when the group III-V HEMT is in an on-state.
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