SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
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United States of America Patent
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Issued Date -
Dec 24, 2015
app pub date -
Feb 6, 2014
filing date -
Feb 8, 2013
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
In the present invention, in a twin plug-forming step, a conductive material is removed so as to form a groove for separating a diffusion layer (29), a diffusion layer-separating insulating film (30) is implanted so as to separate a diffusion layer, and contact plugs (25b) and (25c) are separated. In the twin plug-forming step, a second conductive material is implanted in a contact hole surrounded by a bit line (16) between word lines (10b) and (10d), and is separated in a second direction. The conductive material was implanted in a dummy word line in the related art.
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