METHOD OF FORMING PATTERN

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United States of America Patent

APP PUB NO 20150371862A1
SERIAL NO

14497330

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Abstract

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A method of forming a pattern including following steps is provided. A wafer is provided, wherein the wafer includes a plurality of wafer interior dies and a plurality of wafer edge dies. A first pattern is formed on each of the wafer interior dies, and a second pattern is formed on each of the wafer edge dies. A method of forming the first patterns includes performing at least two exposure processes, and a method of forming the second patterns includes performing at least one of the at least two exposure processes, wherein a number of the exposure processes performed for forming the second patterns is less than a number of the exposure processes performed for forming the first patterns.

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Patent Owner(s)

Patent OwnerAddress
POWERCHIP TECHNOLOGY CORPORATIONNO 12 LI-HSIN RD I SCIENCE-BASED INDUSTRIAL PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Weng, Tuz-Wen Hsinchu City, TW 1 0
Wong, Wen-Yi Kinmen County, TW 3 4

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