Defect engineered high quality multilayer epitaxial graphene growth with thickness controllability
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United States of America Patent
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Jun 20, 2023
Grant Date -
Dec 24, 2015
app pub date -
Feb 14, 2014
filing date -
Feb 14, 2013
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Abstract
Methods for forming a graphene film on a silicon carbide material are provided, along with the resulting coated materials. The method can include: heating the silicon carbide material to a growth temperature (e.g., about 1,000° C. to about 2,200° C.), and exposing the silicon carbide material to a growth atmosphere comprising a halogen species. The halogen species reacts with the silicon carbide material to remove silicon therefrom. The halogen species can comprise fluorine (e.g., SiF4, etc.), chlorine (e.g., SiCl4), or a mixture thereof.
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