METAL ETCHANT COMPOSITIONS AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME
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United States of America Patent
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Issued Date -
Dec 24, 2015
app pub date -
Jun 23, 2014
filing date -
Jun 23, 2014
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Abandoned
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Abstract
The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.
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