METAL ETCHANT COMPOSITIONS AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME

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United States of America Patent

APP PUB NO 20150368557A1
SERIAL NO

14312043

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Abstract

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The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.

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Patent Owner(s)

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CORNELL UNIVERSITYCENTER FOR TECHNOLOGY LICENSING ("CTL") AT CORNELL UNIVERSITY 395 PINE TREE ROAD SUITE 310 ITHACA NY 14850
SAMSUNG ELECTRONICS CO LTDSUWON-SI

International Classification(s)

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  • 2014 Application Filing Year
  • C09K Class
  • 2473 Applications Filed
  • 1988 Patents Issued To-Date
  • 80.39 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances201420152016201720182019202020212022202320240255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jeong, Jihoon Suwon-si, KR 49 216
Kim, Kyoungseob Suwon-si, KR 15 82
Ko, Yongsun Suwon-si, KR 33 215
Lee, Hyosan Hwaseong-si, KR 47 526
Lee, Kuntack Suwon-si, KR 73 881
Lin, Chen Ithaca, US 78 182
Ober, Christopher K Ithaca, US 59 893

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  • 3 Citation Count
  • C09K Class
  • 18.79 % this patent is cited more than
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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1374566838194211301 - 1011 - 2021 - 3031 - 4041 - 5051 - 6081 - 9091 - 100100 +0255075100125150175200225250275300325350375400425450475500

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