CRYSTAL LAYERED STRUCTURE AND LIGHT EMITTING ELEMENT
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United States of America Patent
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Dec 17, 2015
app pub date -
Dec 25, 2013
filing date -
Jan 11, 2013
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Abstract
A crystal layered structure includes a Ga2O3 substrate and a nitride semiconductor layer and is capable of providing a light emitting element having high light output and a light emitting element includes this crystal layered structure. The crystal layered structure includes a Ga2O3 substrate a dielectric layer which is formed on the Ga2O3 substrate so as to partially cover the upper surface of the Ga2O3 substrate, and which has a refractive index difference of 0.15 or less relative to the Ga2O3 substrate and a nitride semiconductor layer which is formed on the Ga2O3 substrate with the dielectric layer interposed therebetween, and which is in contact with the dielectric layer and a portion not covered by the dielectric layer on the upper surface of the Ga2O3 substrate.
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