ALD processes for low leakage current and low equivalent oxide thickness BiTaO films
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United States of America Patent
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Jan 22, 2019
Grant Date -
Dec 17, 2015
app pub date -
Feb 5, 2014
filing date -
Feb 8, 2013
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Abstract
A high dielectric constant (k≥40), low leakage current (≤10−6 A/cm2 at 0.6 nm or lower equivalent oxide thickness) non-crystalline metal oxide is described, including an oxide of two or more compatible metals selected from the group consisting of bismuth, tantalum, niobium, barium, strontium, calcium, magnesium, titanium, zirconium, hafnium, tin, and lanthanide series metals. Metal oxides of such type may be formed with relative proportions of constituent metals being varied along a thickness of such oxides, to enhance their stability. The metal oxide may be readily made by a disclosed atomic layer deposition process, to provide a metal oxide dielectric material that is usefully employed in DRAM and other microelectronic devices.
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