Semiconductor Device Die Singulation by Discontinuous Laser Scribe and Break
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United States of America Patent
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Jun 12, 2014
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Jun 12, 2014
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Abstract
A method for singulating a semiconductor device dies from a wafer, and a singulated semiconductor device die is disclosed. In one embodiment, the method includes forming a plurality of recesses in a surface of the wafer along the edges of the semiconductor device dies to be singulated, each of the recesses having a tapered inner surface. The method further includes applying pressure to an opposite surface of the wafer along the edges of the semiconductor device dies, separating the edges of the semiconductor device dies from the wafer. In one embodiment, the recesses are formed by a pulsed laser. In one embodiment, the pressure is applied by a wafer breaking machine.
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