CVD EPITAXIAL REACTOR CHAMBER WITH RESISTIVE HEATING, THREE CHANNEL SUBSTRATE CARRIER AND GAS PREHEAT STRUCTURE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Dec 17, 2015
app pub date -
Jun 12, 2015
filing date -
Jun 12, 2014
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A CVD reactor for depositing material on substrates may comprise: a vacuum chamber; at least two substrate carriers arranged in parallel in a row within the vacuum chamber, each of the at least two substrate carriers comprising mounting positions for a plurality of substrates, the mounting positions being on the walls of channels configured for flowing process gases, the channels being in parallel planes within all of the at least two substrate carriers; a planar electrically resistive heater between every two adjacent substrate carriers in the row; and planar heaters at both ends of the row. Furthermore, CVD reactor chambers with three channel substrate carriers and/or gas preheat structure are described herein.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully