OXIDE FOR SEMICONDUCTOR LAYER OF THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE
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United States of America Patent
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Issued Date -
Dec 10, 2015
app pub date -
Feb 27, 2014
filing date -
Mar 8, 2013
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Abstract
With respect to this oxide for a semiconductor layer of a thin film transistor, metal elements that constitute the oxide comprise In, Ga, and Zn, the oxygen partial pressure when forming the oxide film as the semiconductor layer of the thin film transistor is 15 volume % or lower (not including 0 volume %), the defect density of the oxide satisfies 2×1016 cm−3 or less, and the mobility satisfies 6 cm2/Vs or more.
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