III-Nitride Device with Improved Transconductance
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United States of America Patent
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app pub date -
Aug 14, 2015
filing date -
Sep 16, 2008
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Abstract
A III-Nitride device has a back-gate disposed in a trench and under and in close proximity to the 2 DEG layer and in lateral alignment with the main gate of the device. A laterally disposed trench is also disposed in a trench and under and in close proximity to the drift region between the gate and drain electrodes of the device. The back-gate is connected to the main gate and the field plate is connected to the source electrode. The back-gate can consist of a highly conductive silicon substrate.
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