Arrays Comprising Vertically-Oriented Transistors and Integrated Circuitry Comprising a Conductive Line Buried in Silicon-Comprising Semiconductor Material
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United States of America Patent
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app pub date -
Aug 19, 2015
filing date -
Aug 21, 2012
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Abandoned
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Abstract
An array includes vertically-oriented transistors, rows of access lines, and columns of data/sense lines. Individual of the rows include an access line interconnecting transistors in that row. Individual of the columns include a data/sense line interconnecting transistors in that column. The data/sense line has silicon-comprising semiconductor material between the transistors in that column that is conductively-doped n-type with at least one of As and Sb. The conductively-doped semiconductor material of the data/sense line includes a conductivity-neutral dopant between the transistors in that column. Methods are disclosed.
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