DRY ETCHING METHOD
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Dec 10, 2015
app pub date -
Dec 27, 2013
filing date -
Dec 27, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
The present invention is an etching method comprising etching a multilayered laminate film that includes at least one silicon oxide film layer and at least one silicon nitride film layer using an etching gas, the etching method simultaneously etching both the silicon oxide film layer and the silicon nitride film layer, the etching gas comprising a linear saturated fluorohydrocarbon compound represented by a formula (1): CxHyFz (wherein x is 4, y is an integer equal to or larger than 4, and z is a positive integer, provided that y+z is 10). According to the present invention, it is possible to etch even a multilayered laminate film while ensuring high selectivity with respect to the mask and an excellent pattern shape, and preventing a situation in which contact holes are clogged by a deposited film.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully