Fabrication of III-Nitride Power Semiconductor Device
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United States of America Patent
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Issued Date -
Dec 10, 2015
app pub date -
Aug 20, 2015
filing date -
Sep 30, 2005
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Abandoned
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Abstract
A method of fabricating a III-nitride power semiconductor device that includes growing a transition layer over a substrate using at least two distinct and different growth methods.
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