Cu—Ga—In—Na target

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United States of America Patent

PATENT NO 10329661
APP PUB NO 20150354055A1
SERIAL NO

14764007

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Abstract

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A sputtering target is composed of an alloy consisting of 5 to 70 at % of at least one element from the group of (Ga, In) and 0.1 to 15 at % of Na, the remainder being Cu and typical impurities. The sputtering target includes at least one intermetallic Na-containing phase.

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Patent Owner(s)

Patent OwnerAddress
PLANSEE SE6600 REUTTE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Knabl, Wolfram Reutte, AT 11 27
Leichtfried, Gerhard Reutte, AT 25 154
Li, Jiehua Leoben, AT 3 2
Linke, Christian Ehenbichl, AT 19 22
Schumacher, Peter Leoben, AT 26 199

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