AFFECTING THE THERMOELECTRIC FIGURE OF MERIT (ZT) AND THE POWER FACTOR BY HIGH PRESSURE, HIGH TEMPERATURE SINTERING
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United States of America Patent
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Issued Date -
Jun 28, 2012
app pub date -
Jan 9, 2009
filing date -
Jun 26, 2006
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Abstract
A method for increasing the ZT of a semiconductor, involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the semiconductor, and recovering the semiconductor with an increased ZT.
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