IMAGE SENSOR FOR X-RAY AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Dec 3, 2015
app pub date -
Sep 30, 2013
filing date -
Jan 17, 2013
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Abstract
Provided are an image sensor for an X-ray and a method of manufacturing the same, the image sensor for the X-ray, including: a semiconductor active layer formed on an insulating substrate; a gate insulating film on the semiconductor active layer; a gate electrode formed on the gate insulating film; an interlayer insulating film which is formed on the gate electrode and in which a first via hole is formed; a source electrode formed on the first via hole; a drain electrode formed on the first via hole; a first electrode formed to be connected to the source electrode or the drain electrode; and a photo diode formed on the first electrode.
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