SEMICONDUCTOR MEMORY ELEMENT AND PRODUCTION METHOD THEREFOR
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United States of America Patent
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Dec 3, 2015
app pub date -
Jan 14, 2014
filing date -
Jan 15, 2013
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Abstract
Provided is a semiconductor memory device including a vertical electrode provided on a substrate and a blocking insulating layer provided on a sidewall of the vertical electrode. A plurality of active patterns are provided spaced apart from the vertical electrode by the blocking insulating layer, and memory patterns are provided between the active patterns.
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