3DIC Interconnect Devices and Methods of Forming Same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20150348874A1
SERIAL NO

14467981

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Abstract

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An interconnect device and a method of forming the interconnect device are provided. Two integrated circuits are bonded together. A first opening is formed through one of the substrates. One or more dielectric films are formed along sidewalls of the first opening. A second opening is formed extending from the first opening to pads in the integrated circuits, while using some of the pads as hard masks. The first opening and the second opening are filled with a conductive material to form a conductive plug.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANYNO 8 LI-HSIN RD 6 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU 300-77

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Jeng-Shyan Tainan City, TW 115 1246
Tsai, Shu-Ting Kaohsiung City, TW 64 546
Yaung, Dun-Nian Taipei City, TW 608 6886

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