METHOD FOR A DRY EXHUMATION WITHOUT OXIDATION OF A CELL AND SOURCE LINE

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United States of America Patent

APP PUB NO 20150340611A1
SERIAL NO

14283893

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Abstract

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Various embodiments of the present invention are directed to a method for fabricating a memory cell comprising performing a passivation step on a cell structure and cell source lines prior to exhuming a masking layer to prevent oxidation of the cell structure and source lines.

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Patent Owner(s)

Patent OwnerAddress
SONY SEMICONDUCTOR SOLUTIONS CORPORATION4-14-1 ASAHICHO ATSUGI-SHI KANAGAWA 2430014

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akhtar, Kamran Boise, US 1 2
Dutta, Ashim Boise, US 107 180
Schrinsky, Alex J Boise, US 20 133
Trapp, Shane J Boise, US 26 251

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