METHOD FOR ANNEALING A THIN FILM PHOTOVOLTAIC CELL DEVICE
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United States of America Patent
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Issued Date -
Nov 26, 2015
app pub date -
May 23, 2014
filing date -
May 23, 2014
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Abandoned
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Abstract
A method of method for annealing a thin film solar cell device is described. The method includes vacuum annealing an as-deposited photovoltaic cell stack composed of a first electrode, a p-i-n junction having at least one p-doped layer, at least one n-doped layer, and at least one intrinsic layer disposed there between, and a second electrode. The vacuum annealing is performed in a non-plasma, vacuum environment by elevating a temperature of the photovoltaic cell stack to an anneal temperature within the range of between 150 degrees C. and 250 degrees C.
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