METHOD FOR FORMING CHALCOGENIDE LAYERS
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United States of America Patent
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Issued Date -
Nov 26, 2015
app pub date -
Apr 27, 2015
filing date -
May 20, 2014
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Abandoned
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Abstract
A method is provided for forming on a substrate a chalcogenide layer, the chalcogenide layer containing at least two metallic elements and containing Se. The method comprises depositing on the substrate a metallic layer containing the at least two metallic elements; and annealing the metallic layer in an environment comprising both a S-containing vapor such as H2S vapor and a Se-containing vapor such as H2Se vapor, thereby forming the chalcogenide layer. The annealing may for example be done at a temperature in the range between 450° C. and 550° C., resulting in a layer with good morphological quality and large grain size, the layer being free of S. A method of the various embodiments may for example be used for forming an absorber layer of a photovoltaic cell.
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