CAPACITOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20150340427A1
SERIAL NO

14497345

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A capacitor structure including at least one capacitor unit is provided. The capacitor unit includes a dielectric layer, an inner metal layer and an outer metal layer. The inner metal layer is disposed in the dielectric layer. The outer metal layer is disposed in the dielectric layer and surrounds the inner metal layer. The outer metal layer includes a first metal layer, two second metal layers and a third metal layer. The first metal layer is disposed under the inner metal layer. The second metal layers are disposed at two sides of the inner metal layer, and lower surfaces of the second metal layers are located equal to or below a lower surface of the inner metal layer. The third metal layer is disposed over the inner metal layer and connects to the second metal layers.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
POWERCHIP TECHNOLOGY CORPORATIONNO 12 LI-HSIN RD I SCIENCE-BASED INDUSTRIAL PARK HSINCHU

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Ching-Hua Hsinchu City, TW 25 58
Chen, Hui-Huang Changhua County, TW 13 124
Lin, Ying-Chia Hsinchu City, TW 4 5
Nagai, Yukihiro Hsinchu City, TW 61 290

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation