RF SWITCH STRUCTURE HAVING REDUCED OFF-STATE CAPACITANCE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Nov 26, 2015
app pub date -
May 26, 2015
filing date -
May 23, 2014
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
An RF switch structure having reduced off-state capacitance is disclosed. The RF switch structure includes an RF switch branch having at least three transistors coupled in series within a device layer. Inter-metal dielectric (IMD) layers are disposed over the device layer. At least one of the IMD layers has an effective dielectric constant that is lower than 3.9. In one exemplary embodiment, the IMD layers are made of silicon dioxide having micro-voids. In another exemplary embodiment, the IMD layers are made of silicon dioxide that includes carbon doping. In either exemplary embodiment, an effective dielectric constant ranges from about 3.9 to around 2.0. In another exemplary embodiment, the IMD layers are made of silicon dioxide having trapped air bubbles that provide an effective dielectric constant that ranges from about 2.0 to 1.1.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully