III NITRIDE EPITAXIAL SUBSTRATE AND METHOD OF PRODUCING THE SAME
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United States of America Patent
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Nov 26, 2015
app pub date -
Nov 28, 2013
filing date -
Jan 4, 2013
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Abstract
A III nitride epitaxial substrate with reduced warp after the formation of a main laminate and improved vertical breakdown voltage, and a method of producing the same, a III nitride epitaxial substrate includes: a Si substrate; an initial layer in contact with the Si substrate; and a superlattice laminate formed on the initial layer, the superlattice laminate including first layers made of AlαGa1-αN (0.5<α≦1) and second layers made of AlβGa1-βN (0<β≦0.5) that are alternately stacked, in which a composition ratio β of the second layers gradually increases as a distance from the Si substrate increases.
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