STACKING STRUCTURE OF A PHOTOELECTRIC DEVICE
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United States of America Patent
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Issued Date -
Nov 19, 2015
app pub date -
Feb 20, 2015
filing date -
May 15, 2014
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Abstract
A stacking structure of a photoelectric device includes a base, a first conducting layer, a first semiconductor layer, a second semiconductor layer, a second conducting layer and two electrodes. The base is essentially made of a light-permeable material. The first conducting layer is arranged on the base and essentially made of a light-permeable, non-metal material. The first semiconductor layer is arranged on the first conducting layer and essentially made of a ternary compound with chalcopyrite phase. The second semiconductor layer is arranged on the first semiconductor layer. The second conducting layer is arranged on the second semiconductor layer and essentially made of a light-permeable semiconductor material different from the light-permeable, non-metal material of the first conducting layer. The two electrodes are respectively arranged on the first and second conducting layers.
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