A HIGH ELECTRON MOBILITY DEVICE BASED ON THE GATE-FIRST PROCESS AND THE PRODUCTION METHOD THEREOF
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Nov 19, 2015
app pub date -
Mar 24, 2014
filing date -
Mar 25, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
The present disclosure belongs to the technical field of radio frequency power devices, and more specifically, to a high electron mobility device based on the gate-first process and the production method thereof. The high electro mobility device is made by adopting the gate-first process according to the present disclosure, wherein gate dielectric sidewalls are utilized to implement the self-alignment of the gate and source; besides, the source and drain of the device can be formed directly by use of the alloying process, the iron implanting process or epitaxy process after formation of the gate since the gate is protected by the passivating layer, featuring a simple technological process while reducing parameter shift of products and enhancing the electrical properties of high electron mobility devices.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully