SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
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United States of America Patent
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Issued Date -
Nov 19, 2015
app pub date -
May 15, 2014
filing date -
May 15, 2014
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Abstract
A semiconductor structure is provided. An N-type epitaxial layer is disposed on an N-type substrate. The N-type epitaxial layer has at least one trench therein, wherein the trench has a straight sidewall. A first insulating layer is disposed on at least a portion of a surface of the trench. A silicon-containing layer is disposed in a lower portion of the trench and has at least one air gap therein. A first conductive layer is disposed in an upper portion of the trench. Two P-type well regions are disposed in the N-type epitaxial layer beside the trench. Two N-type source regions are respectively disposed in the P-type well regions beside the trench.
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