N-TYPE III-V SEMICONDUCTOR STRUCTURES HAVING ULTRA-SHALLOW JUNCTIONS AND METHODS OF FORMING SAME
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United States of America Patent
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Issued Date -
Nov 19, 2015
app pub date -
May 15, 2014
filing date -
May 15, 2014
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Abandoned
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Abstract
Provided are methods of fabricating a semiconductor structure. The methods include providing a III-V semiconductor substrate selected from InGaAs and InAs, introducing an n-type dopant selected from S, Se, and Te directly onto a surface of the III-V semiconductor substrate, introducing a co-dopant selected from N and P directly onto a surface of the III-V semiconductor substrate, and diffusing the n-type and co-dopant into the III-V semiconductor substrate, thereby forming an n-doped III-V semiconductor substrate containing the n-type dopant and the co-dopant. The methods produce inventive semiconductor structures, and devices that include the semiconductor structure.
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