SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE
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United States of America Patent
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Nov 19, 2015
app pub date -
May 12, 2015
filing date -
May 13, 2014
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Abstract
A semiconductor substrate according to embodiments includes a silicon substrate, a silicon nitride layer on the silicon substrate, the silicon nitride layer having a thickness of 1 nm or thicker, single-crystal aluminum nitride layer on the silicon nitride layer, and a single-crystal layer on the aluminum nitride layer, the single-crystal layer containing gallium (Ga).
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