MAGNETORESISTIVE-BASED HIGH FIELD SENSOR
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United States of America Patent
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app pub date -
Jul 7, 2014
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Oct 5, 2012
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Abandoned
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Abstract
An omnidirectional magnetoresistive magnetic field sensor includes a plurality of magnetic material film layers each having an equal thickness of less than 0.5 nanometers (nm), and a plurality of non-magnetic spacer layers between each of the magnetic material film layers.
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