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Abstract

A method for forming a resistive random access memory is provided. The method comprises: steps of: S1) providing a silicon substrate; S2) forming an isolation layer on the silicon substrate; S3) forming a bottom electrode on the isolation layer; S4) forming a resistive switching material layer on the bottom electrode by magnetron sputtering at room temperature, comprising: S41) forming a first resistive switching layer of TaO_x on the bottom electrode by magnetron sputtering under a first deposit pressure and in a first atmosphere, in which 042) forming a second resistive switching layer of TaO_y on the first resistive switching layer by magnetron sputtering under a second deposit pressure and in a second atmosphere, in which 05) forming a top electrode on the resistive switching material layer; and S6) removing the resistive switching materials TaO_x and TaO_y sputtered onto contacts of the bottom electrode in step S4.

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