III-V TRANSISTOR AND METHOD FOR MANUFACTURING SAME
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United States of America Patent
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Nov 12, 2015
app pub date -
Jun 18, 2013
filing date -
Jun 25, 2012
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Abstract
Disclosed are a group III-V based transistor and a method for manufacturing same. The group III-V based transistor includes a laminated semiconductor structure having an upper surface and a lower surface and including a group III-V based semiconductor layer, and at least one 2DEG region extending from the upper surface of the laminated semiconductor structure to the lower surface thereof. A vertical-type GaN-based transistor using 2DEG can be provided by adopting the 2DEG region.
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