Power Semiconductor Device with Low RDSON and High Breakdown Voltage
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United States of America Patent
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Issued Date -
Nov 12, 2015
app pub date -
Apr 13, 2015
filing date -
May 7, 2014
priority date (Note) -
Abandoned
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Abstract
A semiconductor structure is disclosed. The semiconductor structure includes a trench having substantially parallel trench sidewalls, and a tapered dielectric liner in the trench. The tapered dielectric liner includes slanted dielectric sidewalls. A conductive filler is enclosed by the slanted dielectric sidewalls in the trench.
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