METHOD FOR PREPARING MATERIAL ON INSULATOR BASED ON ENHANCED ADSORPTION
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United States of America Patent
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Issued Date -
Nov 12, 2015
app pub date -
Mar 21, 2013
filing date -
Jan 23, 2013
priority date (Note) -
Abandoned
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Abstract
Provided is a method for preparing a material on an insulator based on enhanced adsorption. In the method: first, a single crystal film having a doped superlattice structure, an intermediate layer, a buffer layer and a top layer film are epitaxially grown in succession on a first substrate; then, low dosage ion implantation is performed on the structure on which the top layer film is formed, so that ions are implanted above an upper surface or below a lower surface of the single crystal film having a doped superlattice structure; next, a second substrate having an insulation layer is bonded to the structure on which ion implantation has already been performed, and an annealing treatment is performed, so that a microscopic crack is produced at the single crystal film having a doped superlattice structure to achieve atomic-scale stripping. The effective stripping of bonding wafers is achieved by means of enhanced adsorption. The stripped surface is smooth and has a low roughness, and the quality of the crystal of the top layer film is high.
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