SEMICONDUCTOR FABRICATION METHOD
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United States of America Patent
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Issued Date -
Nov 12, 2015
app pub date -
Oct 9, 2014
filing date -
May 9, 2014
priority date (Note) -
Abandoned
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Abstract
A semiconductor fabrication method is provided. A substrate having thereon a base layer, a hard mask layer, and a core layer is prepared. A resist pattern is transferred to the core layer, thereby forming a core pattern. The core pattern is subjected to a post-clean process. Thereafter, a spacer layer is deposited on the core pattern. The spacer layer is etched to form spacer pattern on each sidewall of the core pattern. The core pattern is then removed. The spacer pattern is transferred to the underlying hard mask layer and the base layer.
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