Hash Fast Marching Method for Simulation of Surface Evolution in Photoresist Etching Process

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United States of America Patent

APP PUB NO 20150324499A1
SERIAL NO

14649661

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Abstract

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Disclosed is a hash fast marching method for simulation of surface evolution in a photoresist etching process, including: dividing a substrate into grids and determining an etching speed matrix, initializing a grid point time value, building a hash table and a minimum heap, marching forward and performing an update, and repeating the foregoing steps until a time value of a minimum root node is not smaller than a preset photoresist etching (photoresist development) time. In the invention method, calculation is performed only for grid points in a narrow band (NarrowBand) around the established surface, and this narrow band only has a width of one grid point, so that higher iteration efficiency is achieved.

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Patent Owner(s)

Patent OwnerAddress
SOUTHEAST UNIVERSITYNO 2 SIPAILOU XUANWU DISTRICT JIANGSU NANJING 211189

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shi, Lili Jiangsu, CN 16 22
Zhou, Zaifa Jiangsu, CN 3 2

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