Method of Forming an Embedded Memory Device
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United States of America Patent
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app pub date -
Jul 14, 2015
filing date -
Aug 3, 2012
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Abstract
The present disclosure describes a method of forming a memory device. The method includes receiving a wafer substrate, forming a poly stack pattern on the wafer substrate, performing an ion implantation process to form a source and a drain in the wafer substrate, forming a memory gate and a control gate in the defined poly stack pattern, and forming a control gate in the control poly stack pattern. Forming the memory gate further includes performing a memory gate recess to bury the memory gate in an oxide layer.
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