CHIP WITH ENHANCED LIGHT EXTRACTION
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United States of America Patent
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Issued Date -
Oct 29, 2015
app pub date -
Apr 27, 2015
filing date -
Apr 28, 2014
priority date (Note) -
Abandoned
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Abstract
Described herein are devices and methods incorporating light extraction features for improving light extraction in light emitting diode (LED) chips, for example, thin-film semiconductor LED chips such as thin film GaN chips. These features can be located in the semiconductor diode region of an LED chip and are configured to improve device light extraction by redirecting light emitted by the chip's active region. In some embodiments, the light extraction features can comprise a material with a refractive index lower than the surrounding semiconductor material. In some embodiments, the light extraction features are shaped to improve light extraction and can be formed as protrusions, indentations and can comprise various features such as sloped sidewalls. Also disclosed herein are contact configurations for improving electrical conductivity in the disclosed devices.
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