Photoelectric conversion device and method for manufacturing photoelectric conversion device
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United States of America Patent
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Nov 15, 2016
Grant Date -
Oct 22, 2015
app pub date -
Oct 10, 2013
filing date -
Oct 16, 2012
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Abstract
The inventive photoelectric conversion device includes a substrate, a lower electrode layer provided on the substrate, a CIGS compound semiconductor layer provided on the lower electrode layer as covering the lower electrode layer, and a transparent electrode layer provided on the compound semiconductor layer, wherein the compound semiconductor layer has a maximum Ga content variation of not less than 5% as measured in a layer thickness direction, and a maximum In content variation of not less than 6% as measured in the layer thickness direction.
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