METHOD OF FORMING CIGS ABSORBER LAYER FOR SOLAR CELL AND CIGS SOLAR CELL
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Jul 10, 2013
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Jul 13, 2012
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Abstract
A method of forming a CIGS absorber layer using a three-stage co-evaporation process, which can improve the efficiency of a solar cell in the case where Na concentration of a substrate is low and thus the depletion layer of the CIGS absorber layer is thick. The method includes a first stage of co-evaporating In, Ga and Se to deposit them; a second stage of co-evaporating Cu and Se to deposit them; and a third stage of co-evaporating In, Ga and Se to deposit them, wherein Ga supply through evaporation in the first stage is greater than Ga supply through evaporation in the third stage.
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