Isolation structure, semiconductor device having the same, and method for fabricating the isolation structure
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United States of America Patent
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Sep 8, 2020
Grant Date -
Oct 22, 2015
app pub date -
Jun 30, 2015
filing date -
Sep 26, 2011
priority date (Note) -
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Abstract
An isolation structure of a semiconductor, a semiconductor device having the same, and a method for fabricating the isolation structure are provided. An isolation structure of a semiconductor device may include a trench formed in a substrate, an oxide layer formed on a bottom surface and an inner sidewall of the trench, a filler formed on the oxide layer to fill a part of inside of the trench, and a fourth oxide layer filling an upper portion of the filler of the trench to a height above an upper surface of the trench, an undercut structure being formed on a boundary area between the inner sidewall and the oxide layer.
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