Semiconductor Device Having Shallow Trench Isolation and Method of Forming the Same
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United States of America Patent
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Issued Date -
Oct 22, 2015
app pub date -
Mar 20, 2015
filing date -
Apr 16, 2014
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Abstract
A device includes a first dielectric film formed in a first trench along a first bottom surface portion and a first side surface portion with leaving a first gap in the first trench and a second dielectric film formed in a second trench along a second bottom surface portion and a second side surface portion with leaving a second gap in the second trench. The first bottom surface portion is covered approximately conformably with a first part of the first dielectric film, the first side surface portion is covered approximately conformably with a second part of the first dielectric film, and the first part is larger in thickness than the second part. The second bottom surface portion is covered approximately conformably with a third part of the second dielectric film, the second side surface portion is covered approximately conformably with a fourth part of the second dielectric film, and the third part is larger in thickness than the fourth part.
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